✦ LIBER ✦

Low-frequency noise characteristics of Gallium Arsenide MESFETs

✍ Scribed by L.M. Rucker; J.R. Hellums

Publisher: Elsevier Science
Year: 1984
Tongue: English
Weight: 132 KB
Volume: 27
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(84)90067-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-frequency noise in Gallium Arsenide

Low-frequency noise in Gallium Arsenide MESFETs

✍ K.H. Duh; X.C. Zhu; A. van der Ziel 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 419 KB

Low-frequency noise in gallium arsenide

Low-frequency noise in gallium arsenide structures

✍ J.R. Hellums; L.M. Rucker 📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 336 KB

Low-noise preamplifiers for 1 K operatio

Low-noise preamplifiers for 1 K operation using gallium arsenide MESFETs of very low 1/f noise

✍ D.V. Camin; G. Pessina; E. Previtali; G. Ranucci 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 574 KB

They operate at 4 K and output characteristics taken at this temperature show high dynamic output impedance and transconductance. Using these devices it was possible to develop voltagesensitive preamplifiers for operation inside a dilution refrigerator at 1 K to amplify the signals from cryogenic pa

High frequency characteristics of MESFET

High frequency characteristics of MESFETs

✍ Ali Afzali-Kushaa; George I. Haddad 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 438 KB

The low-temperature velocity-field chara

The low-temperature velocity-field characteristic of n-type gallium arsenide

✍ G.A. Acket; H.'T Lam; W. Heinle 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 158 KB

Fabrication technology of stable Schottk

Fabrication technology of stable Schottky barrier gates for gallium arsenide MESFETS

✍ Masao Ida; Masao Uchida; Keiho Shimada; Kazuyoshi Asai; Satoru Ishida 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 425 KB