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Low energy ion induced damage in silicon at 50 K

โœ Scribed by D.A. Thompson; R.S. Walker

Publisher
Elsevier Science
Year
1976
Weight
329 KB
Volume
132
Category
Article
ISSN
0029-554X

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Reactiw" ion etching (RIE) of silicon in a nitrogen trifluoride (Nk~) plasma is studied at temperatures between + 20 and -140 ยฐ~\ 7he etch rates decrease with decreasing temperature and follow an Arrhenius-type dependence below -70 ยฐC Cross-sectional transmission electron microscopy gives" evidence