The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep
โฆ LIBER โฆ
Low-energy ion bombardment effects in reactive rf magnetron sputtering of carbon nitride films
โ Scribed by R Kaltofen; T Sebald; G Weise
- Book ID
- 114086170
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 343 KB
- Volume
- 308-309
- Category
- Article
- ISSN
- 0040-6090
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