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Low dimensional carrier confinement structure grown on patterned GaAs(111)A substrates by molecular beam epitaxy

โœ Scribed by K Fujita; H Ohnishi; Pablo O Vaccaro


Book ID
114155921
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
214 KB
Volume
43-44
Category
Article
ISSN
0167-9317

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Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [