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Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

✍ Scribed by Park, J.-S.; Curtin, M.; Hydrick, J. M.; Bai, J.; Li, J.-T.; Cheng, Z.; Carroll, M.; Fiorenza, J. G.; Lochtefeld, A.

No coin nor oath required. For personal study only.

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