Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes
β Scribed by G. Parish; R.A. Kennedy; G.A. Umana-Membreno; B.D. Nener
- Book ID
- 108271616
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 388 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiatio
Using current-voltage measurements, we have investigated the electrical behavior of molybdenum on 4H-SiC Schottky diodes of various areas and having different edge terminations consisting of high resistivity guard rings manufactured by carbon ion-implantation. Both forward and reverse electrical ch