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Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

✍ Scribed by W. Nakamura; Y. Tokuda; H. Ueda; T. Kachi


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
182 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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