Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 ยฐC and annealed at 450 or 600 ยฐC. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. T
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation
โ Scribed by T. Cesca; A. Gasparotto; G. Mattei; B. Fraboni; F. Boscherini; M. Longo; L. Tarricone
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 152 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0168-583X
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