Incorporation of active Fe impurities in GaInP by high temperature ion implantation

✍ Scribed by T. Cesca; A. Gasparotto; A. Verna; B. Fraboni; G. Impellizzeri; F. Priolo; L. Tarricone; M. Longo

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 148 KB
• Volume: 242
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.08.152

✦ Synopsis

Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 °C and annealed at 450 or 600 °C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. The redistribution of the Fe atoms is studied by means of SIMS depth profiling. The electrical properties related to Fe implantation are studied by current-voltage measurements. The results allow a first analysis of the similarities and the differences showed by the Fe implanted GaInP with respect to the InP case.