In order to clarify the photogenerated acid diffusion in resist film, the diffusion behavior of acid, as well as the role of additional base component was investigated in tert-butoxycarbonyl (t-BOC) protected type chemically amplified positive deep ultraviolet (DUV) resists. The resists consisted of
Lithographic importance of base diffusion in chemically amplified photoresists
β Scribed by Thomas Schnattinger; Andreas Erdmann
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 295 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0167-9317
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