✦ LIBER ✦

Linearity-optimized GaN HEMT Doherty amplifiers using derivative superposition technique for WCDMA applications

✍ Scribed by Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 620 KB
Volume: 50
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.23181

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Gallium nitride (GaN) high‐electron mobility transistor (HEMT) Doherty amplifiers with the optimized linearity for wide‐band code division multiple access (WCDMA) applications are represented. At a 7‐dB back‐off output power, the measured single‐carrier WCDMA results show two‐way and three‐way GaN HEMT Doherty amplifiers with an adjacent channel leakage ratio (ACLR) of −43.2 and −48.2 dBc at ±2.5 MHz offset frequency with a drain efficiency of 43.1% and 30.9%, respectively. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 701–705, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23181

📜 SIMILAR VOLUMES

Highly efficient class-F GaN HEMT Dohert

Highly efficient class-F GaN HEMT Doherty amplifier for WCDMA applications

✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 443 KB

## Abstract This article presents a high‐efficiency GaN HEMT class‐F Doherty amplifier for 2.14‐GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6‐dB back‐off power from Psat) for a single tone. For a one‐car

A highly linear and efficient two-stage

A highly linear and efficient two-stage GaN HEMT asymmetrical Doherty amplifier for WCDMA applications

✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 438 KB

## Abstract In this article, we propose a highly linear and efficient two‐stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first‐stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving

A highly linear and efficient three-way

A highly linear and efficient three-way Doherty amplifier using two-stage GaN HEMT cells for repeater systems

✍ Yong-Sub Lee; Mun-Woo Lee; San-Ho Kam; Yoon-Ha Jeong 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 461 KB

## Abstract In this article, we propose a highly linear and efficient three‐way Doherty amplifier using two‐stage GaN HEMT cells for repeater systems. The driving cells are used as the predistortion circuit to improve linearity as well as the gain stage. The main cells are optimized to achieve high