𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Lifetime and carrier-concentration profile of B+-implanted p-type HgCdTe

✍ Scribed by A. Fraenkel; S. E. Schacham; G. Bahir; E. Finkman

Book ID
121823925
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
703 KB
Volume
60
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Optical measurement of carrier concentra
Optical measurement of carrier concentration profile in n-type semiconducting GaAs substrate
✍ Kitamoto, Takuya ;Inoue, Yusuke ;Yamada, Masayoshi ;Kawase, Tomohiro πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 391 KB

## Abstract The light absorption below the fundamental energy gap in n‐type GaAs has been investigated precisely. It is experimentally confirmed that there are the three different mechanisms: (a) the enhancement of fundamental absoption due to the shrinkage of energy gap and band filling by doping