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Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy

✍ Scribed by Park, S. H.; Hanada, T.; Oh, D. C.; Minegishi, T.; Goto, H.; Fujimoto, G.; Park, J. S.; Im, I. H.; Chang, J. H.; Cho, M. W.; Yao, T.; Inaba, K.

Book ID: 111658767
Publisher: American Institute of Physics
Year: 2007
Tongue: English
Weight: 470 KB
Volume: 91
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2813021

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## Abstract Nanostructured ZnO films were fabricated on nanopored Si(001) surfaces through reactive ion etching and plasma‐assisted molecular‐beam epitaxy techniques. Nanowall‐like nanostructures were formed on the ZnO film surfaces depending on the thickness of the ZnO films. Significant enhanceme