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Photoluminescence studies of ZnO thin films on porous silicon grown by plasma-assisted molecular beam epitaxy

✍ Scribed by Kim, Min Su; Nam, Giwoong; Son, Jeong-Sik; Leem, Jae-Young


Book ID
121994298
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
553 KB
Volume
12
Category
Article
ISSN
1567-1739

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A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700