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Strong enhancement of emissions from nanostructured ZnO thin films grown by plasma-assisted molecular-beam epitaxy on nanopored Si(001) substrates

✍ Scribed by Choi, Jun-Ho ;Han, Seok Kyu ;Hong, Soon-Ku ;Song, Jung-Hoon ;Jeong, Se Young ;Cho, You Suk ;Kim, Dojin ;Nam, Yoon Sung ;Baek, Kyung-Seon ;Chang, Soo-Kyung ;Yao, Takafumi

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
429 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Nanostructured ZnO films were fabricated on nanopored Si(001) surfaces through reactive ion etching and plasma‐assisted molecular‐beam epitaxy techniques. Nanowall‐like nanostructures were formed on the ZnO film surfaces depending on the thickness of the ZnO films. Significant enhancement of the photoluminescence intensity up to 15 fold was observed from the nanostructured ZnO films. We found that the emission properties of the film changed very sensitively with the nanostructure on the surface and the enhancement is closely related to the formations of nanostructures on the surface of the ZnO films, not at the interface between the films and the substrate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall