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Lattice location of16O implanted in Si crystals by backscattering

✍ Scribed by Chernov, I. ;Kryuchkov, Yu. ;Mamontov, A. ;Slavin, N. ;Timoshnikov, Yu.

Publisher
John Wiley and Sons
Year
1977
Tongue
English
Weight
154 KB
Volume
43
Category
Article
ISSN
0031-8965

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Boron lattice location in room temperatu
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The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 Γ— 10 20 B/cm 3 were grown by M