Lattice Location and Ionisation Induced Annealing of Self-Interstitials in Boron-Implanted Silicon by Rutherford Backscattering

✍ Scribed by Götz, G. ;Sommer, G.

• Publisher: John Wiley and Sons
• Year: 1975
• Tongue: English
• Weight: 163 KB
• Volume: 32
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2210320261