Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice
Lattice distortions in GaAs-AlAs and GaAs-InAs superlattices
β Scribed by Hikaru Terauchi; Kousei Kamigaki; Hirofumi Sakashita; Naokatsu Sano; Hiromu Kato; Masaaki Nakayama
- Publisher
- Elsevier Science
- Year
- 1986
- Weight
- 47 KB
- Volume
- 174
- Category
- Article
- ISSN
- 0167-2584
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π SIMILAR VOLUMES
We have theoretically investigated the valence-band discontinuity \(\left(\Delta E_{v}\right)\) at the (100) GaAs/AlAs interface with the InAs strained insertion-layer. The theoretical calculation is carried out by the self-consistent tight-binding method with the \(s p^{3} s^{*}\) basis in the \((\
We present a new method to design the energy level scheme of quantum dot (QD) structures by combining band gap engineering with the self-organized growth of (QDs). With the embedding of QDs in two-dimensional supperlattices optical transition energies, ionization energies and the absorption properti
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