Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP
โ Scribed by Teemu Hakkarainen; Andreas Schramm; Antti Tukiainen; Risto Ahorinta; Lauri Toikkanen; Mircea Guina
- Book ID
- 107470860
- Publisher
- Springer-Verlag
- Year
- 2010
- Tongue
- English
- Weight
- 437 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1931-7573
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๐ SIMILAR VOLUMES
A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o
Soft photocurable nanoimprint lithography has been used to pattern (1 0 0) GaAs substrate into periodic nucleation sites for the growth of InAs site-controlled quantum dots (SCQDs). The pattern is a twodimension square array of nanopores with size ranging from 60 to 110 nm, which is tunable by adjus
## Abstract We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based