𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

✍ Scribed by C.L. Zhang; Z.G. Wang; F.A. Zhao; B. Xu; P. Jin

Book ID
108165728
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
369 KB
Volume
265
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

One-dimensional alignment of InAs dots o
One-dimensional alignment of InAs dots on strain-controlled InGaAs layers by selective-area molecular-beam epitaxy
✍ Koichi Yamaguchi; Tadahiro Hiraike; Kazutoshi Kawaguchi πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 814 KB

One-dimensional 1D arrangement of self-organizing InAs dots was demonstrated on strained InGaAs buffer layers Ε½ . grown on mesa-strip-shaped GaAs substrates by molecular-beam epitaxy MBE . Large anisotropy of strain relaxation in the Ε½ . InGaAs buffer layer was observed by double crystal X-ray diffr

Effect of different strain reducing laye
Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy
✍ S.P. Ryu; N.K. Cho; J.Y. Lim; W.J. Choi; J.D. Song; J.I. Lee; Y.T. Lee; C.G. Par πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 449 KB

We investigated the effect of InGaAs and AlGaAs combination strain reducing layers on InAs quantum dots (QDs) grown by migration enhanced epitaxy. The samples were examined by cross-sectional transmission electron microscopy, low-temperature and power dependent photoluminescence (PL). We observed th

Growth of high-quality InSb layer on (00
Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots
✍ Lim, J. Y. ;Song, J. D. ;Choi, W. J. ;Ahn, J. P. ;Yang, H. S. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 246 KB

## Abstract In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subs