Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots

✍ Scribed by Lim, J. Y. ;Song, J. D. ;Choi, W. J. ;Ahn, J. P. ;Yang, H. S.

• Book ID: 105366330
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 246 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026714

✦ Synopsis

Abstract

In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb‐growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8‐µm‐thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm^2^/Vs at 300 K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate.