✦ LIBER ✦
Growth of high-quality relaxed SiGe films with an intermediate Si1−yCy layer for strained Si n-MOSFETs
✍ Scribed by P.S. Chen; S.W. Lee; K.F. Liao
- Book ID
- 108215359
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 465 KB
- Volume
- 130
- Category
- Article
- ISSN
- 0921-5107
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