✦ LIBER ✦
Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions
✍ Scribed by J. H. Lee; Z. M. Wang; W. T. Black; V. P. Kunets; Y. I. Mazur; G. J. Salamo
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 999 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1616-301X
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✦ Synopsis
Abstract
We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based on the underlying science, this growth approach enables the localization of InAs QDs on GaAs (100) by controlling the sidewall facets and InAs monolayer coverage.