✦ LIBER ✦

Lateral migration of point defects in Si induced by localized ion implantation

✍ Scribed by Matsukawa, T.; Yokoyama, K.; Sawara, S.; Ohdomari, I.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Monte Carlo methods in defects migration

✍ Mazzone, A.M. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 672 KB

Monte Carlo Methods in Defects Migration

✍ Mazzone, A.M. 📂 Article 📅 1985 🏛 IEEE 🌐 English ⚖ 841 KB

Reduced lateral straggling of implantati

✍ Kieslich, A.; Doleschel, H.; Kieseling, F.; Reithmaier, J. P.; Forchel, A. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 326 KB

Reverse short-channel effect due to late

✍ Kunikiyo, T.; Mitsui, K.; Fujinaga, M.; Uchida, T.; Kotani, N. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 901 KB

Migration and interaction properties of

✍ Sebania Libertino; Salvatore Coffa 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 142 KB

The migration of the defects induced by

✍ R. Marinescu; S. Prisecaru; R. Albu 📂 Article 📅 1992 🏛 Springer 🌐 English ⚖ 298 KB