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Lateral IGBT in thin SOI for high voltage, high speed power IC

✍ Scribed by Ying-Keung Leung; Paul, A.K.; Plummer, J.D.; Wong, S.S.


Book ID
114537466
Publisher
IEEE
Year
1998
Tongue
English
Weight
310 KB
Volume
45
Category
Article
ISSN
0018-9383

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## Abstract The heat generation process inside thin‐film silicon‐on‐insulator LDMOS structures accounting for Linear Doping Profile (LDP) or Variation on Lateral Doping (VLD) is analysed in this paper by means of numerical simulation tools and analytical modeling. A uniform heat density, mainly due