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[Hartung-Gorre Verlag ISPSD'94 International Symposium on Power Semiconductor Devices and IC's - Davos, Switzerland (31 May-2 June 1994)] Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics - Thin SOI IGBT leakage current and a new device structure for high temperature operation

✍ Scribed by Matsudai, T.; Yamaguchi, Y.; Yasuhara, N.; Nakagawa, A.; Mochizuki, H.

Book ID: 118147251
Publisher: Hartung-Gorre Verlag
Year: 1994
Weight: 370 KB
Volume: 0
Category: Article
ISBN-13: 9783891917848
DOI: 10.1109/ispsd.1994.583804

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