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Lateral growth of highly oriented graphite by chemical vapor deposition upon Pt film formed on sapphire

โœ Scribed by Yudasaka, M. ;Kikuchi, R. ;Matsui, T. ;Ohki, Y. ;Ota, E. ;Yoshimura, S.


Book ID
105385069
Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
412 KB
Volume
156
Category
Article
ISSN
0031-8965

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Preparation of highly (100)-oriented CeO
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CeO 2 films were prepared on Al 2 O 3 substrates by laser chemical vapor deposition at different laser power (P L ) up to 182 W. The (100)-oriented CeO 2 films were prepared at P L =101-167 W (T dep = 792-945 K). The texture coefficient (TC) of ( 200) reflection had a maximum of 6.7 at P L = 113 W (