Preparation of highly (100)-oriented CeO2 films on polycrystalline Al2O3 substrates by laser chemical vapor deposition
β Scribed by Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 353 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0257-8972
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β¦ Synopsis
CeO 2 films were prepared on Al 2 O 3 substrates by laser chemical vapor deposition at different laser power (P L ) up to 182 W. The (100)-oriented CeO 2 films were prepared at P L =101-167 W (T dep = 792-945 K). The texture coefficient (TC) of ( 200) reflection had a maximum of 6.7 at P L = 113 W (T dep = 836 K). The (100)oriented CeO 2 films consisted of granular grains and showed a columnar cross section. The deposition rates (R dep ) of (100)-oriented CeO 2 films showed a maximum of 43 ΞΌm h -1 at P L = 152 W (T dep = 912 K).
π SIMILAR VOLUMES
A pulsed KrF excimer laser is used to deposit YBa2Cu30 7 films on MgO (100). We report on the influence of target-substrate distance, oxygen pressure and substrate temperature in the range of 30 to 100 mm, 0.03 to 0.4 mbar and 732 to 800Β°C, respectively. The film quality is characterized by electric