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High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

โœ Scribed by Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto


Book ID
108278742
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
798 KB
Volume
205
Category
Article
ISSN
0257-8972

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Preparation of highly (100)-oriented CeO
โœ Pei Zhao; Akihiko Ito; Rong Tu; Takashi Goto ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 353 KB

CeO 2 films were prepared on Al 2 O 3 substrates by laser chemical vapor deposition at different laser power (P L ) up to 182 W. The (100)-oriented CeO 2 films were prepared at P L =101-167 W (T dep = 792-945 K). The texture coefficient (TC) of ( 200) reflection had a maximum of 6.7 at P L = 113 W (