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Growth of InGaN films on c-plane sapphire substrates with an AlN nucleation layer by using metal-organic chemical-vapor deposition

✍ Scribed by Dang-Hui Wang, Sheng-Rui Xu, Jin-Cheng Zhang, Ke Chen, Zhi-Wei Bi, Lin-Xia Zhang, Fan-Na Meng, Shan Ai, Yue Hao

No coin nor oath required. For personal study only.

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