Thermally annealed GaN nucleation layers and the device-quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphire

✍ Scribed by Wickenden, D. K.; Miragliotta, J. A.; Bryden, W. A.; Kistenmacher, T. J.

• Book ID: 125417995
• Publisher: American Institute of Physics
• Year: 1994
• Tongue: English
• Weight: 459 KB
• Volume: 75
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.356590