𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Laser ultrasonic study of porous silicon layers

✍ Scribed by S. M. Zharkii; A. A. Karabutov; I. M. Pelivanov; N. B. Podymova; V. Yu. Timoshenko

Book ID
110134191
Publisher
Springer
Year
2003
Tongue
English
Weight
72 KB
Volume
37
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Mechanism of silicon epitaxy on porous s
Mechanism of silicon epitaxy on porous silicon layers
✍ P. L. Novikov; L. N. Aleksandrov; A. V. Dvurechenskii; V. A. Zinov’ev πŸ“‚ Article πŸ“… 1998 πŸ› SP MAIK Nauka/Interperiodica 🌐 English βš– 184 KB
Electrical properties study of double po
Electrical properties study of double porous silicon layers: Conduction mechanisms
✍ R. Jemai; A. Alaya; O. Meskini; M. Nouiri; R. Mghaieth; K. Khirouni; S. Alaya πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 394 KB

The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investi

Acoustic investigation of porous silicon
Acoustic investigation of porous silicon layers
✍ R. J. M. Fonseca; J. M. Saurel; A. Foucaran; J. Camassel; E. Massone; T. Talierc πŸ“‚ Article πŸ“… 1995 πŸ› Springer 🌐 English βš– 450 KB

Porous silicon (PS) layers are formed on p+-type silicon wafers by electrochemical anodization in hydrofluoric acid solutions. Microechography and acoustic signature, V(z), have been performed at 1.5 GHz and 600 MHz, respectively, in order to study the elastic properties of PS layers. The thicknesse

Depth inhomogeneity of porous silicon la
Depth inhomogeneity of porous silicon layers
✍ Thönissen, M.; Billat, S.; Krüger, M.; Lüth, H.; Berger, M. G.; Frotscher, πŸ“‚ Article πŸ“… 1996 πŸ› American Institute of Physics 🌐 English βš– 353 KB