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Acoustic investigation of porous silicon layers

✍ Scribed by R. J. M. Fonseca; J. M. Saurel; A. Foucaran; J. Camassel; E. Massone; T. Taliercio; Y. Boumaiza

Publisher
Springer
Year
1995
Tongue
English
Weight
450 KB
Volume
30
Category
Article
ISSN
0022-2461

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✦ Synopsis

Porous silicon (PS) layers are formed on p+-type silicon wafers by electrochemical anodization in hydrofluoric acid solutions. Microechography and acoustic signature, V(z), have been performed at 1.5 GHz and 600 MHz, respectively, in order to study the elastic properties of PS layers. The thicknesses of PS layers were measured and longitudinal, shear and Rayleigh velocities and Young's modulus were obtained as a function of porosity. Equations showing the porosity dependence of bulk wave velocities and Young's modulus have also been proposed.

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