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Laser induced disordering of GaAs-AlGaAs superlattice and incorporation of Si impurity

✍ Scribed by Epler, J. E.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.; Bashaw, M. C.

Book ID
120164561
Publisher
American Institute of Physics
Year
1986
Tongue
English
Weight
500 KB
Volume
49
Category
Article
ISSN
0003-6951

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Correlation between Si diffusion and Si-
Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices
✍ Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 241 KB

Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio