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Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−xbarriers

✍ Scribed by L. J. Guido; N. Holonyak; K. C. Hsieh; R. W. Kaliski; J. E. Baker; D. G. Deppe; R. D. Burnham; R. L. Thornton; T. L. Paoli

No coin nor oath required. For personal study only.

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