Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio
โฆ LIBER โฆ
Diffusion induced disorder of GaAs/AlGaAs superlattices
โ Scribed by I. Harrison; H. P. Ho; N. Baba-Ali
- Book ID
- 112816200
- Publisher
- Springer US
- Year
- 1991
- Tongue
- English
- Weight
- 976 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Correlation between Si diffusion and Si-
โ
Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi
๐
Article
๐
1986
๐
Elsevier Science
๐
English
โ 241 KB
Optical spectroscopy of purposely disord
โ
Eda Tuncel; Lorenzo Pavesi; Franz-Karl Reinhart
๐
Article
๐
1989
๐
Elsevier Science
๐
English
โ 435 KB
Fluorescence line narrowing and excitation spectra measurements were performed on purposely disordered short period AlGaAs/GaAs superlattices at low temperature. Coupled to the effects of the purposely introduced disorder in the vertical direction, we observe the effects of non controlled statistica
Laser induced disordering of GaAs-AlGaAs
โ
Epler, J. E.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L.; Bashaw, M. C.
๐
Article
๐
1986
๐
American Institute of Physics
๐
English
โ 500 KB
Diffusion induced disorder in AlAs-GaAs
โ
H. P. Ho; I. Harrison; N. Baba-Ali; B. Tuck; M. Henini
๐
Article
๐
1991
๐
Springer US
๐
English
โ 701 KB
FIR Induced Intrinsic Exciton Transition
โ
Dremin, A. A. ;Timofeev, V. B. ;Birkedal, D. ;Hvam, J. M.
๐
Article
๐
1997
๐
John Wiley and Sons
๐
English
โ 154 KB
Observation of grating-induced intersubb
โ
Helm, M.; Colas, E.; England, P.; DeRosa, F.; Allen, S. J.
๐
Article
๐
1988
๐
American Institute of Physics
๐
English
โ 507 KB