๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Diffusion induced disorder of GaAs/AlGaAs superlattices

โœ Scribed by I. Harrison; H. P. Ho; N. Baba-Ali


Book ID
112816200
Publisher
Springer US
Year
1991
Tongue
English
Weight
976 KB
Volume
20
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Correlation between Si diffusion and Si-
โœ Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 241 KB

Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio

Optical spectroscopy of purposely disord
โœ Eda Tuncel; Lorenzo Pavesi; Franz-Karl Reinhart ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 435 KB

Fluorescence line narrowing and excitation spectra measurements were performed on purposely disordered short period AlGaAs/GaAs superlattices at low temperature. Coupled to the effects of the purposely introduced disorder in the vertical direction, we observe the effects of non controlled statistica