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Diffusion induced disorder in AlAs-GaAs superlattice by transition elements

✍ Scribed by H. P. Ho; I. Harrison; N. Baba-Ali; B. Tuck; M. Henini

Book ID
112814442
Publisher
Springer US
Year
1991
Tongue
English
Weight
701 KB
Volume
20
Category
Article
ISSN
0361-5235

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Correlation between Si diffusion and Si-
Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices
✍ Hisao Nakashima; Junji Kobayashi; Toshiaki Fukunaga; Kazunori Matsui; Kohji Ishi πŸ“‚ Article πŸ“… 1986 πŸ› Elsevier Science 🌐 English βš– 241 KB

Compositional disordering of AIGaAs superlattices induced by Si ion implantation and subsequent annealing has been studied by secondary ion mass spectrometry (SIMS). Distinct correlation is found between the induced disordering and the rapid Si diffusion which occurs above the critical concentratio