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Laser annealing of silicon on sapphire ion implanted at elevated temperatures

✍ Scribed by G. Alestig; G. Holmén

Book ID
113278117
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
483 KB
Volume
22
Category
Article
ISSN
0168-583X

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Laser annealing of nitrogen and oxigen i
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Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of