✦ LIBER ✦

Langmuir evaporation from the (100), (111A), and (111B) faces of GaAs

✍ Scribed by Bernard Goldstein; Daniel J. Szostak; Vladimir S. Ban

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interfacial chemistry and stability of s

✍ T. Scimeca; Y. Muramatsu; M. Oshima; H. Oigawa; Y. Nannichi 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 175 KB

The homoepitaxial growth of on-axis GaAs

✍ D.A. Woolf; J.P. Williams; D.I. Westwood; Z. Sobiesierski; J.E. Aubrey; R.H. Wil 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 397 KB

Chemistry of Wet Treatment of GaAs(111)B

✍ Berkovits, V. L.; Ulin, V. P.; Tereshchenko, O. E.; Paget, D.; Rowe, A. C. H.; C 📂 Article 📅 2011 🏛 The Electrochemical Society 🌐 English ⚖ 676 KB

Investigation of surface states on the p

✍ W. Ranke; K. Jacobi 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Effect of substrate orientation on growt

✍ Dr. L. G. Lavrentyeva; Yu. G. Kataev; V. A. Moskovkin; Dr. M. P. Yakubenya 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 718 KB

Ab initio Calculations of GaN Initial Gr

✍ Matsuo, Y. ;Kumagai, Y. ;Irisawa, T. ;Koukitu, A. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 97 KB 👁 1 views