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Chemistry of Wet Treatment of GaAs(111)B and GaAs(111)A in Hydrazine-Sulfide Solutions

โœ Scribed by Berkovits, V. L.; Ulin, V. P.; Tereshchenko, O. E.; Paget, D.; Rowe, A. C. H.; Chiaradia, P.; Doyle, B. P.; Nannarone, S.


Book ID
121721136
Publisher
The Electrochemical Society
Year
2011
Tongue
English
Weight
676 KB
Volume
158
Category
Article
ISSN
0013-4651

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Comparison of GaN Buffer Layers Grown on
โœ Kumagai, Y. ;Murakami, H. ;Seki, H. ;Koukitu, A. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 104 KB ๐Ÿ‘ 1 views

Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A