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Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxy

✍ Scribed by O Brandt; R Muralidharan; A Thamm; P Waltereit; K.H Ploog

Book ID: 108417403
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 295 KB
Volume: 175-176
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(01)00090-3

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