✦ LIBER ✦
Characterization of generation lifetime and deep-level defects in an In0.4Ga0.6Asp−i−n photodiode prepared by molecular beam epitaxy growth on GaAs
✍ Scribed by Yen C. Tzeng; Ping C. Yang; Ching S. Lee; Sheng S. Li
- Book ID
- 111709164
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 258 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0038-1101
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