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Junction temperature measurement of GaN-based light-emitting diodes using temperature-dependent resistance

โœ Scribed by Zhao, Yu; Zhong, Wenjiao; Liu, Jun; Huang, Zhihao; Wei, Aixiang

Book ID
121484317
Publisher
Institute of Physics
Year
2014
Tongue
English
Weight
616 KB
Volume
29
Category
Article
ISSN
0268-1242

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A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the line