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Effects of Temperature on Current Crowding of GaN-Based Light-Emitting Diodes

โœ Scribed by Jung, Eunjin; Kim, Seongjun; Kim, Hyunsoo


Book ID
120222752
Publisher
IEEE
Year
2013
Tongue
English
Weight
473 KB
Volume
34
Category
Article
ISSN
0741-3106

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Effect of selective ion-implanted p-GaN
โœ Yun-Wei Cheng; Hung-Hsien Chen; Min-Yung Ke; Cheng-Pin Chen; Jian Jang Huang ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 344 KB

A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the ptype GaN layer is demonstrated. The junction temperature extracted from a forward voltage method of an ion-implanted LED is significantly lower than that of a conventional LED. Furthermore, the line