Joining of silicon nitride to silicon nitride and to Invar alloy using an aluminium interlayer
β Scribed by Katsuaki Suganuma; Taira Okamoto; Mitsue Koizumi; Masahiko Shimada
- Publisher
- Springer
- Year
- 1987
- Tongue
- English
- Weight
- 612 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0022-2461
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The resistance of PECVD SiN films to dry etching is increased by more than three orders of magnitude by exposure to an oxygen plasma. In this paper we describe the oxygen treatment. Both the film thickness and the refractive index are modified by the oxygen treatment suggesting a homogenous densific
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## Abstract We studied the reaction of SiCl~4~ with NH~3~ by mass spectrometry and IR spectroscopy. By means of mass spectrometry, SiCl~3~NH~2~ was for the first time identified as an intermediate generated in significant amounts in the course of the reaction. In additional experiments, SiCl~3~NH~2