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Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

✍ Scribed by Khurgin, Jacob B.; Jena, Debdeep; Ding, Yujie J.

Book ID: 118007977
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 681 KB
Volume: 93
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2961120

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