Adding a phosphorus-containing species during chemical vapor deposition of Ge islands on Si(0 0 1) modiΓΏes the island sizes and shapes, primarily by changing the surface energies and the relative surface energies of di erent surface facets. Three distinct island shapes occur, but the island types an
Island formation in Ge films on GaAs(1 1 0)
β Scribed by F. Ciccacci; S. Selci; P. Chiaradia; A. Cricenti; Z. Habib
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 247 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0038-1098
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Thin gold films were fabricated by vacuum resistive deposition on the n-Ge (111) wafers. The films were annealed between 300 and 600 1C. These resulting thin films were then characterised using scanning electron microscopy (field emission and back-scattering modes), Rutherford back scattering spectr