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[IRE 1986 International Electron Devices Meeting - ()] 1986 International Electron Devices Meeting - Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type silicon

✍ Scribed by Swirhun, S.E.; Kwark, Y.-H.; Swanson, R.M.

No coin nor oath required. For personal study only.

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