𝔖 Bobbio Scriptorium

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[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Effective mobility in heavily doped n-MOSFETs: measurements and models

✍ Scribed by Villa, S.; Lacaita, A.L.; Perron, L.; Bez, R.

Book ID: 120539345
Publisher: IEEE
Year: 1996
Weight: 407 KB
Category: Article
ISBN-13: 9780780333932
DOI: 10.1109/IEDM.1996.553611

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