[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon

✍ Scribed by del Alamo, J.; Swirhun, S.; Swanson, R.M.

• Book ID: 121856858
• Publisher: IRE
• Year: 1985
• Weight: 284 KB
• Category: Article
• DOI: 10.1109/IEDM.1985.190954